Silicon carbide (SiC) bonding is a critical process in manufacturing high-performance ceramic components used across industries like aerospace, defense, energy, and electronics. This technique creates durable molecular connections between silicon carbide particles or substrates, enabling exceptional thermal stability, mechanical strength, and chemical resistance. Three primary methods dominate industrial applications: reaction bonding, hydroxide catalysis bonding, and active soldering. Each approach addresses specific performance requirements in end products ranging from armor plating to semiconductor substrates.
Silicon carbide (SiC) has become indispensable across industries ranging from aerospace to semiconductors due to its extreme hardness, thermal stability, and chemical resistance. This article explores the industrial production methods, focusing on the Acheson process, while also covering advanced techniques like Physical Vapor Transport (PVT) and Chemical Vapor Deposition (CVD).